Schottky (Metal-Semiconductor) Diode

← EDC

Barrier height ϕ_Bn, built-in potential, depletion width, thermionic emission. Majority-carrier device, no minority-carrier storage.

Semiconductor

Parameters

N_D — donor doping (cm⁻³)

ϕ_M — metal work function (eV)

Temperature (K)

For p-type Schottky, swap ϕ_Bn for ϕ_Bp = E_g − ϕ_Bn. ϕ_M > ϕ_S → rectifying.

E_c E_v E_vac E_f

Depletion Approximation — Visualised

For a Schottky barrier, the depletion region exists only on the semiconductor side. The metal side has no depletion. Charge density ρ(x) on the SC side, electric field E(x) triangle.

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✍ Derivation — click to expand ▶