Surface Generation — Doping Profile & Excess Carriers

← EDC

Plug in a surface generation rate G₀ (cm⁻³s⁻¹) and a doping profile. The engine derives the equilibrium n(x)/p(x), the excess-carrier profile Δn(x) = G₀·τ·exp(-x/L_n), and the 1-D Poisson E(x), V(x). Decoupled from the generation mechanism (light, impact, surface traps — anything that gives a G₀).

Material & Profile

Generation & lifetime

Profile param visibility follows the selected type. Excess-carrier profile is computed for low-level injection (Δn ≪ majority).
NA (acceptors) ND (donors) n (electrons) p (holes) E(x) electric field Δn (excess)
✍ Derivation — click to expand