Bipolar Junction Transistor (BJT)

Ebers–Moll model, current gains α and β, and small-signal parameters g_m, r_π, r_o. Two flavors: NPN and PNP.

Type

Material

I_B — base current (μA)

V_BE — base-emitter voltage (V)

β_F — forward current gain

V_A — Early voltage (V)

Temperature (K)

E_c E_v E_f E_vac

✍ Derivation — click to expand ▶