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  "title": "Solar Cell — EDC Workbench",
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  "description": "The Solar Cell workbench covers photovoltaic energy conversion. Set the incident power P_in, the material (Si, GaAs, CIGS, CdTe, perovskite), and the temperature. See the I-V curve, the open-circuit voltage V_oc, the short-circuit current I_sc, the maximum power point (V_mp, I_mp), the fill factor FF, and the conversion efficiency η. Use it to compare materials, predict outdoor performance, or design a PV system.",
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    "solar cell",
    "photovoltaic",
    "open circuit voltage",
    "short circuit current",
    "fill factor",
    "efficiency"
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    "formulas": [
      "I-V equation: I = I_ph − I_s·(e^{V/V_T} − 1) − (V + I·R_s)/R_sh",
      "Open-circuit voltage: V_oc = V_T·ln(I_ph/I_s + 1) ≈ V_T·ln(I_ph/I_s)",
      "Short-circuit current: I_sc ≈ I_ph (when R_s small, R_sh large)",
      "Fill factor: FF = (V_mp·I_mp) / (V_oc·I_sc) ≈ 0.7-0.85 for good cells",
      "Efficiency: η = FF·V_oc·I_sc / P_in",
      "Max power point: dP/dV = 0 → I_mp ≈ I_ph·(1 − V_T/V_oc)"
    ],
    "citations": [
      "Sze & Ng, \"Physics of Semiconductor Devices,\" 3rd ed., 2006, Ch. 13.",
      "Green, M. A., \"Third Generation Photovoltaics,\" Springer, 2006."
    ],
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        "q": "Why does the efficiency drop at high temperature?",
        "a": "V_oc = V_T·ln(I_ph/I_s) decreases with temperature (I_s increases exponentially with T). For Si: ∂V_oc/∂T ≈ −2 mV/°C."
      },
      {
        "q": "What is the theoretical max efficiency for Si?",
        "a": "Shockley-Queisser limit: ~33% for a single-junction cell under AM1.5G. Multi-junction cells can exceed 40%."
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  "last_updated": "2026-07-05"
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