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  "title": "MOSFET — EDC Workbench",
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  "description": "The MOSFET workbench covers the MOS transistor in saturation. Pick an NMOS or PMOS, set V_GS and V_DS, and see I_D, g_m, r_o, V_OV (overdrive), V_th (threshold). Use it to design a bias circuit, verify a CMOS inverter, or debug a current mirror.",
  "keywords": [
    "mosfet",
    "threshold voltage",
    "transconductance",
    "body effect",
    "subthreshold",
    "triode",
    "saturation"
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    "formulas": [
      "Threshold: V_th = V_th0 + γ·(√(2·φ_F + V_SB) − √(2·φ_F)) (body effect)",
      "Saturation current: I_D = (1/2)·μ_n·C_ox·(W/L)·(V_GS − V_th)²·(1 + λ·V_DS)",
      "Triode: I_D = μ_n·C_ox·(W/L)·[(V_GS − V_th)·V_DS − V_DS²/2] for V_DS < V_GS − V_th",
      "Transconductance: g_m = μ_n·C_ox·(W/L)·(V_GS − V_th) = √(2·μ_n·C_ox·(W/L)·I_D)",
      "Output resistance: r_o = 1 / (λ·I_D)",
      "Body effect coefficient: γ = √(2·q·ε_s·N_A)) / C_ox"
    ],
    "citations": [
      "Sedra & Smith, \"Microelectronic Circuits,\" 7th ed., 2015, Ch. 4-5.",
      "Tsividis, Y., \"Operation and Modeling of the MOS Transistor,\" 3rd ed., Oxford, 2011."
    ],
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        "q": "Why is V_th higher for higher body bias V_SB?",
        "a": "Body effect: the source-body junction is reverse-biased, widening the depletion region and increasing the threshold. γ·(√(2·φ_F + V_SB) − √(2·φ_F))."
      },
      {
        "q": "How do I size a current mirror?",
        "a": "I_ref = (1/2)·μ·C_ox·(W/L)·(V_GS − V_th)². I_out = (W/L)_out / (W/L)_ref · I_ref. Pick V_GS, compute (W/L)_ref, then set (W/L)_out for the desired I_out."
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  "last_updated": "2026-07-05"
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