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  "slug": "edc-led",
  "title": "LED — EDC Workbench",
  "category": "electronic-devices",
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  "description": "The LED workbench covers light-emitting diodes. Pick a material (GaAs, AlGaAs, GaP, SiC, GaN), set the bias current, and see the emitted wavelength λ, the optical power, the external quantum efficiency, the I-V curve, and the emission spectrum. Use it to design an LED driver, predict the color of an alloy, or verify a datasheet.",
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    "formulas": [
      "Emitted wavelength: λ = hc / E_g (e.g., 870 nm for GaAs with E_g = 1.42 eV)",
      "Recombination: radiative (band-to-band) vs non-radiative (SRH, Auger)",
      "Internal quantum efficiency: η_int = R_rad / (R_rad + R_nonrad) = τ_nr / (τ_rad + τ_nr)",
      "External quantum efficiency: η_ext = η_int·η_inj·η_optical",
      "Optical power: P = η_ext·I·(hc/λ)/q",
      "Direct bandgap required for efficient light emission (Si is indirect — bad for LEDs)"
    ],
    "citations": [
      "Sze & Ng, \"Physics of Semiconductor Devices,\" 3rd ed., 2006, Ch. 12.",
      "Schubert, E. F., \"Light-Emitting Diodes,\" 3rd ed., Cambridge, 2018."
    ],
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        "q": "Why is Si a bad LED material?",
        "a": "Si has an indirect bandgap. The conduction band minimum is not at the same k as the valence band maximum. Electron-hole recombination requires a phonon, making the radiative rate slow. Auger and SRH dominate."
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      {
        "q": "Why does my red LED need a higher forward voltage than my blue LED?",
        "a": "V_F ≈ E_g/q. Red (AlGaAs) E_g = 1.9 eV → V_F ≈ 1.9 V. Blue (GaN) E_g = 3.0 eV → V_F ≈ 3.0 V. Higher photon energy → higher turn-on voltage."
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  "last_updated": "2026-07-05"
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