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  "slug": "edc-bjt",
  "title": "BJT — EDC Workbench",
  "category": "electronic-devices",
  "category_label": "Electronic devices",
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  "description": "The BJT workbench covers the bipolar junction transistor in forward-active mode. Pick a BJT (2N3904, 2N2222, etc.), set I_B, and see I_C, V_CE, g_m, r_π, r_o, f_T. Use it to design a bias circuit, verify small-signal parameters, or debug a BJT amplifier.",
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    "bjt",
    "bipolar junction transistor",
    "ebers moll",
    "current gain",
    "small signal",
    "transconductance"
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  "content": {
    "formulas": [
      "Collector current: I_C = I_S·e^{V_BE/V_T}",
      "Base current: I_B = I_C / β (forward active)",
      "Transconductance: g_m = I_C / V_T",
      "Input resistance: r_π = β / g_m = β·V_T / I_C",
      "Output resistance: r_o = V_A / I_C (Early effect)",
      "Transition frequency: f_T = g_m / (2π·(C_π + C_μ))",
      "V_CE(sat) ≈ 0.2 V (saturation)"
    ],
    "citations": [
      "Sedra, A. S., Smith, K. C., \"Microelectronic Circuits,\" 7th ed., Oxford, 2015, Ch. 6.",
      "Streetman & Banerjee, \"Solid State Electronic Devices,\" 7th ed., 2015, Ch. 7."
    ],
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        "q": "Why does g_m depend on I_C, not β?",
        "a": "g_m = I_C / V_T depends only on I_C and temperature. The base current I_B = I_C/β does not affect g_m. β is a process parameter, not a design knob for g_m."
      },
      {
        "q": "My BJT saturates at V_CE = 0.2 V — why not 0?",
        "a": "V_CE(sat) ≈ 0.2 V is the saturation voltage, not 0. The collector-base junction is forward-biased; V_CE = V_BE − V_BC ≈ 0.7 − 0.5 = 0.2 V."
      }
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  "last_updated": "2026-07-05"
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